摘要
为解决GO制备过程中,不可避免引入的石墨烯拓扑结构缺陷对热传递性能的显著影响,研究采用石墨烯量子点(GQDs)作为外部碳源,通过在高温条件下修复石墨烯中的拓扑结构缺陷,制备出了自支撑的石墨化–氧化石墨烯/石墨烯量子点(g-GO/GQDs)散热薄膜。与原始的gGO膜相比,g-GO/GQDs薄膜的面内热导率提高了22.1%,达到739.04 W/(m·K)。通过进一步的薄膜结构分析,发现其热导率的提高可归因于石墨化过程中sp2碳晶格域的恢复和形成。石墨烯导热薄膜的散热性能研究表明,该研究结果可有效提高石墨烯薄膜的散热效果,为制备高性能散热薄膜提供了新思路。
During the preparation process of graphene oxide(GO), the unavoidable introduction of topological structural defects into graphene has a significant adverse impact on the heat transfer property of graphene. In this work, graphene quantum dots(GQDs) were selected as an external carbon source,through the reparation of the structural defects in graphene plane under high temperature graphitization conditions, the free-standing heat-dissipating films based on graphene were fabricated. Compared to the pristine g-GO film, the in-plane thermal conductivity of graphitized graphene oxide/graphene quantum dots(g-GO/GQDs) film was enhanced by 22.1%, reaching 739.04 W/(m·K). Through further structural characterizations of the films, the thermal conductivity enhancement in the presence of GQDs can be attributed to the reparation and formation of carbon sp2 lattice domains during the graphitization process.This founding reveals that the reparation of topological structure defects of graphene can efficiently improve the heat dissipation performance of graphene films, providing a new idea for the preparation of high performance heat-dissipation films.
作者
江陆洋
李昊亮
吴限
邱汉迅
李静
杨俊和
JIANG Luyang;LI Haoliang;WU Xian;QIU Hanxun;LI Jing;YANG Junhe(School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)
出处
《上海理工大学学报》
CAS
CSCD
北大核心
2020年第2期163-171,共9页
Journal of University of Shanghai For Science and Technology
基金
上海市自然科学基金资助项目(18ZR1426300)
上海市科委项目(17511101603)。
关键词
氧化石墨烯
石墨烯量子点
石墨烯薄膜
拓扑结构缺陷
热导率
graphene oxide
graphene quantum dots
graphene film
topological structure defect
thermal conductivity
