摘要
石墨烯具有优异的光、电、热及机械性能,在传统硅基器件日益趋近物理极限的背景下,石墨烯场效应晶体管(GFET)作为一种新型纳米器件受到广泛的关注。介绍了GFET在模拟电路和数字电路中的研究进展,分析了目前存在的问题:模拟电路主要应该提高GFET的最大振荡频率(f max)使之与截至频率(f T)相符;数字电路主要应该采取有效方法打开石墨烯带隙、提高开关比,并介绍了通过构建石墨烯纳米带、双层石墨烯、掺杂法及通过基底影响等来打开带隙的方法。与数字电路相比,GFET在模拟电路中更具有应用潜力,如在太赫兹领域已表现出优异的性能。石墨烯和硅互为补充,以混合电路的形式加以应用也是一个很好的切入点。
Graphene has excellent optical,electrical,thermal and mechanical properties.With the traditional silicon-based devices approaching the physical limit,graphene field effect transistor(GFET)as a new nano device has been widely concerned.By analyzing the research progresses of GFET in the application of analog circuits and digital circuits,the research idea was put forward,that is,the maximum oscillation frequency(f max)of GFET should be increased in analog circuit to match the cutoff frequency(f T),and the graphene band gap should be opened and the on-off ratio should be increased in digital circuit.The methods to open the band gap by constructing graphene nanoband,double-layer graphene and doping method,and the influence of substrate were introduced.Compared with digital circuits,GFET has more potential applications in analog circuits,for example,it has shown excellent performance in terahertz field.Graphene and silicon are complementary to each other,so it is a good starting point to apply them in the form of hybrid circuit.
作者
吕晓丽
肖荣林
李克伦
苏艳敏
吴浩波
王文婧
马卫平
张文发
LYU Xiao-li;XIAO Rong-lin;LI Ke-lun;SU Yan-min;WU Hao-bo;WANG Wen-jing;MA Wei-ping;ZHANG Wen-fa(Shaanxi Coal Chemical Industry Technology Research Institute Co.,Ltd.,Xi’an 710065,China)
出处
《陕西煤炭》
2020年第S01期138-142,共5页
Shaanxi Coal
