摘要
Fig.1(a)Schematic of hybrid organic-metal oxide multilayer channel transistors architecture;(b)cross-sectional high-resolution scanning transmission electron microscopy image for hybrid organic-metal oxide TFTs;(c)corresponding band structures Thin-film transistors(TFTs)made from metal oxides,which have useful properties,including high charge carrier mobility and optical transparency,have been widely used in recent years,particularly in organic light-emitting diode displays[1-3].Currently,most metal oxide TFTs are manufactured by physical vapor deposition techniques,but solution-based processing methods could be promising for simpler and more cost-effective strategy[4-5].So far,solution-processed metal oxide TFTs still face significant challenges in carrier mobility and operational stability[6-7].
出处
《材料导报》
EI
CAS
CSCD
北大核心
2020年第8期1-2,共2页
Materials Reports
