摘要
针对纳米硅薄膜的厚度会影响其反射与吸收性能的问题,采用时域有限差分(FDTD)方法对纳米硅薄膜进行了模拟计算。分析了纳米硅薄膜对入射电磁波的衰减现象,并详细地讨论了纳米硅薄膜的厚度对其反射率、吸收率及其他光学性能的影响。计算结果表明,纳米硅薄膜对入射电磁波存在显著的吸收作用,硅材料的薄膜化有效地增强了其吸收率,厚度为650 nm的硅薄膜在入射光波长为481 nm时吸收率可达0.62,而半无限型体材硅的吸收率仅为0.48。纳米硅薄膜的反射率、透射率和吸收率随其厚度的变化均呈现出明暗相间的条纹结构,表明薄膜干涉效应对其性质有显著的影响。其中,厚度为500 nm的硅薄膜在宽光谱范围内具有较高的吸收率,适合新一代光电器件方面的应用。
Considering the fact that the thickness of nano-silicon film affects its reflection and absorption properties, the time-domain finite difference(FDTD) method is used to simulate the nano-silicon film. The attenuation of incident electromagnetic waves by nano-silicon films is analyzed, and the effects of the thickness of nano-silicon films on their reflectivity, absorptivity and other optical properties are discussed in detail. The simulation results show that the nano-silicon film has a significant absorption effect on incident electromagnetic waves. Thinning of silicon material can effectively enhance its absorptivity. The absorptivity of nano-silicon thin films with the thickness of 650 nm can reach 0.62 at 481 nm, while that of semi-infinite silicon is only 0.48. The reflectivity, transmittance and absorptivity of nano-silicon films show a stripe structure between light and shade with the change of their thickness, which indicates that the interference effect of nano-silicon films has a significant impact on their properties. Among them, the silicon thin film with the thickness of 500 nm has a high absorptivity in a wide spectral range, which is suitable for the application of the new generation optoelectronic devices.
作者
蒋旭
苏未安
殷超
JIANG Xu;SU Weian;YIN Chao(School of Science,Jiangxi University of Science and Technology,Ganzhou 341000,China)
出处
《江西理工大学学报》
CAS
2020年第1期90-96,共7页
Journal of Jiangxi University of Science and Technology
基金
国家自然科学基金资助项目(11464016)。
