摘要
全息光刻-反应离子束刻蚀是一种非常重要的制作光栅的方法,而如何解决全息曝光中的驻波问题,提高光栅的制作质量,实现该方法向硅材料等高反射率基底的推广应用是一项急需解决的问题。研究开发了一套完整可行的全息光刻-反应离子束刻蚀制作硅光栅的方法,成功制得1μm周期的高质量硅光栅,光栅侧壁陡直且光滑。理论分析得到,全息曝光驻波效应的强弱跟基底的反射率成正相关,通过涂布减反膜将基底反射率降低到了2%以下,成功解决了驻波问题。探究并优化了感应耦合等离子体刻蚀减反膜的工艺参数,得到了陡直且光滑的光栅掩膜。并与热压增大掩膜占宽比的技术相结合,实现了对掩膜占宽比的双向调控,既可调大,也可调小,得到了占宽比分别为0.29和0.44的硅光栅。该方法工艺可控性好,制作质量高,通用性强,不仅适用于硅材料,也可扩展到其他高反射率材料,不仅适用于一维光栅,也可扩展到二维光栅。
Holographic lithography combined with reactive ion beam etching is a very important method for fabricating gratings.However,it is an urgent problem to solve the standing wave problem in holographic exposure,improve the quality of grating,and apply this method to high reflectivity substrates such as silicon materials.A complete and feasible method for fabricating silicon gratings by holographic lithography combined with reactive ion beam etching has been developed.A high quality silicon grating with a period of 1 micron was successfully fabricated,and the sidewalls were steep and smooth.Theoretical analysis shows that the standing wave effect of holographic exposure is positively correlated with the reflectivity of the substrate.And by coating the anti-reflection layer to reduce the substrate reflectivity to less than 2%,the standing wave problem is successfully solved.The process parameters of inductively coupled plasma etching anti-reflection layer were explored and optimized,and a steep and smooth grating mask was obtained.Combining with the technique of increasing the duty cycle of mask by hot pressing,the two-way regulation of the duty cycle is realized,which can be adjusted larger or smaller.And the silicon gratings with the duty cycle of 0.29 and 0.44 were obtained.This developed method has good controllability,high fabrication quality and strong versatility.It can be applied not only to silicon materials but also to other high reflectivity materials,not only to one-dimensional gratings but also to two-dimensional gratings.
作者
郑衍畅
王铭
胡华奎
王雅楠
杨春来
王海
ZHENG Yanchang;WANG Ming;HU Huakui;WANG Yanan;YANG Chunlai;WANG Hai(College of Mechanical and Automotive Engineering,Anhui Polytechnic University,Wuhu 241000,China;National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China)
出处
《安徽工程大学学报》
CAS
2019年第6期28-32,45,共6页
Journal of Anhui Polytechnic University
基金
国家自然科学基金资助项目(11705001)
安徽省自然科学基金资助项目(1808085QA12,1708085ME105)
关键词
硅光栅
全息光刻
反应离子束刻蚀
驻波
感应耦合等离子体刻蚀
silicon grating
holographic lithography
reactive ion beam etching
standing wave
inductively coupled plasma etching
