期刊文献+

一种功率运算放大器失效机理的研究

Research on Failure Mechanism of a Power Operational Amplifier
下载PDF
导出
摘要 对一种功率运算放大器的失效问题进行了研究并分析了失效机理。功率运算放大器在测试时发生失效,同时,-20 V供电电源电压在加电过程中存在波动。通过内部目检发现失效芯片内部驱动晶体管及相连的金属均存在过流烧毁形貌。对失效功率运算放大器和良好功率运算放大器进行红外热成像分析,失效器件的温升总体比台温高10℃。通过失效分析,供电电源发生快速突跳导致了功率运算放大器内的晶体管在导通和关断之间快速切换形成热量累积效应,从而导致器件烧毁,造成功率运算放大器过流失效。对电源输出波形异常原因进行分析,电源限流过小导致电源电压降低,从而造成加电时快速突跳。最后,搭建测试电路对功率运算放大器进行复现实验,进一步证明了器件的失效机理。 The failure problem of a power operational amplifier was studied and the failure mechanism was analyzed.The power operational amplifier failed during the test,and the-20 V supply voltage fluctuated during power-on process.Through the internal inspection,it was found that the driving transistor and the connected metal inside the failure chip have over current burnout appearance.Infrared thermal imaging analysis of the failure power operational amplifier and the good power operational amplifier was carried out,which demonstrated that the total temperature raise of the failure device was 10℃higher than that of the test machine.Based on the failure analysis,the failure of the power operational amplifier was caused by fast hop of the supply power.The fast hop caused fast switching of the transistor of the power operational amplifier,forming heat accumulation that was the reason of the burnout.The abnormal reason of the power output waveform was analyzed,the fast hop of the supply power when power-on was caused by the decrease of the voltage that was resulted from unreasonable current limit.Finally,the repetition test was applied based on the test circuit,the failure mechanism of the power operational amplifier was further proved.
作者 廉鹏飞 孔泽斌 陈倩 杨洋 李娟 祝伟明 楼建设 王昆黍 Lian Pengfei;Kong Zebin;Chen Qian;Yang Yang;Li Juan;Zhu Weiming;Lou Jianshe;Wang Kunshu(No.808 Institute,Shanghai Academy of Spaceflight Technology,Shanghai 201109,China;No.803 Institute,Shanghai Academy of Spaceflight Technology,Shanghai 201109,China)
出处 《半导体技术》 CAS 北大核心 2020年第1期77-83,共7页 Semiconductor Technology
基金 预先研究项目(050401)
关键词 功率运算放大器 失效分析 电源 过流 限流 power operational amplifier failure analysis power over current current limit
  • 相关文献

参考文献7

二级参考文献30

  • 1刘婷婷,喻明艳.带共模反馈的CMOS套筒式高增益运算放大器[J].哈尔滨工业大学学报,2006,38(5):783-785. 被引量:5
  • 2陈卫洁,邹雪城,程帅,邓敏.一种超宽共模输入范围高性能运算放大器的设计[J].微电子学与计算机,2007,24(1):79-81. 被引量:5
  • 3孙肖子,张企民.模拟电子技术基础[M].西安:西安电子科技大学出版社,2006. 被引量:6
  • 4冯涛,王程.集成运放应用电路设计360例[M].北京:电子工业出版社,2007. 被引量:1
  • 5陈大钦,张林.电子技术基础[M].北京:高等教育出版社,2006. 被引量:1
  • 6T.Li,C.Tsai,E. Rosenbaum,et al.Substrate Resistance Modeling and Circuit-Level Simulation of Parasitic Device Coupling Effects for CMOS 1/0 Cireuils under ESD Stress[J].Electrical Overstress/Electrosiatic Discharge Symposium Proceedings, 1998,1998: 281-289. 被引量:1
  • 7Tong Li,Ching-Han Tsai,Rosenbaum,E.,Sung-Mo Kang.Substrate mocleling and lumped substrate resistane extraction for CMOS ESD/latchup circuit simulation[A].Design Automation Conference, 1999. Proceedings. 36th 21-25 June 1999[C]. 1999:549-554. 被引量:1
  • 8Tong Li,Ching-Han Tsai,Elyse Rasenbaum,Sung-Mo Kang.Modeling, Extraction and Simulation of CMOS 1/0 Circuits under ESD Stress,Department of Electrical and Computer Engineering,Coordinated Science Laboratory University of ILlinois at Urbana-Champaign 1308 W.Main St.,Urbana,IL 61801. 被引量:1
  • 9Amerasek era,A.Mi-ChangChang, Duvvury, C. H amaswamy S.Modeling MOSsnapbaekandparasiticbipolaraction forcircuit-levelESDand high-current simulations [J].Circuits and Devices Magazine, 1997,13(2):7-10. 被引量:1
  • 10Li,T,Tsai,C.H,Huh,Y.J,Rosenbaum,E.,Kang,S.M..A New Algorithm For Circuit-Level Electrothermal Simulation under EOS/ESD Stress[J].Integrated Reliability Workshop Final Report, 1997 IEEE International 13-16 Oct. 1997:130-131. 被引量:1

共引文献27

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部