摘要
为了提高GaAsInP发光二极管的发光提取效率,在本文中,将其电流扩展层上生长光子晶体刻蚀深度作为损失的重要因素,并作为一个测试案例,分析波导在板中蚀刻的三个不同的气孔形状作为损失的关键因素,并且计算这些损耗以便在这种结构中达到更高的效率。并通过利用PhC板中的有效折射率建模和研究它们的传输来证明PhC在LED表征中的能力。最后,结果表明,仿真结果与实验数据吻合良好,有限元建模中的大量传输表明,它可以提高超过10%的光提取效率,提高了LED的效率。
In order to improve the light extraction efficiency of GaAsInP leds,in this article,the current expansion layer grown on photonic crystal etching depth,as an important factor of losses,and as a test case,analysis of waveguide in plate etching of three different hole shape as the loss of the key factors,and calculate the loss in order to achieve higher efficiency in the structure. The capability of PhC in LED characterization is demonstrated by modeling the effective refractive index of PhC plates and studying their transport. Finally,the results show that the simulation results are in good agreement with the experimental data. A large number of transmissions in the finite element modeling show that it can improve the light extraction efficiency by more than 10% and improve the LED efficiency.
作者
肖贵贤
XIAO Guixian(School of Electrical and Electronic Information Engineering,Hubei Polytechnic University,Huangshi Hubei 435003.China)
出处
《激光杂志》
北大核心
2020年第1期137-142,共6页
Laser Journal
基金
湖北省教育厅指导性项目(No.B20123003)
湖北省大学生创新训练项目(No.201710920033)
中央引导地方科技发展专项(No.2018ZYYD006)
关键词
二维光子晶体板
蚀刻孔
有效折射率
光提取效率
two-dimensional photonic crystal plate
etched hole
effective refractive index
light extraction efficiency
