摘要
高压IGBT/FRD管(1200 V以上)用外延片外延厚度通常在100μm以上,远超常规外延材料,使用傅里叶红外光谱法(FTIR)测量时,往往光谱center burst出现变异,对测量结果计算造成误差。实验分析不同因素对光谱的影响,同时确认重掺衬底条件下光谱正向峰型稳定规律,重新定义取值峰,采用正向峰值计算方法避免产生测试误差,提高测试稳定性。
The epitaxial wafer for high voltage IGBT/FRD tube(above 1200 V) is difficult to test because its epitaxial thickness is usually above 100 μm. Fourier transform infrared spectroscopy(FTIR) is often used to measure the thickness of epitaxy layer. The spectral center burst varies, which results in errors in the calculation of measurement results. The influence of different factors on the spectral variation is analyzed experimentally, and the stability of the forward peak shape is confirmed under the condition of heavily doped substrates. Therefore, it is necessary to redefine the peak value and adopt the forward peak calculation method to avoid the test error and improve the test stability.
作者
潘文宾
黄宇程
王银海
杨帆
PAN Wenbin;HUANG Yucheng;WANG Yinhai;YANG Fan(Nanjing Guosheng Electronics CO.,LTD.,Nanjing 211111,China)
出处
《电子与封装》
2019年第12期46-50,共5页
Electronics & Packaging
关键词
高速恢复二极管
硅外延
厚层
FTIR
光谱变异
fast recovery diode
silicon epitaxy
thick layer
FTIR
spectral variation
