摘要
碳化硅在研抛加工过程中极易产生表面损伤,从而影响工件表面质量和疲劳性能。基于硬脆材料的研抛去除机理,建立有限元仿真模型,模拟单颗粒研抛过程,分析了工件材料的去除过程,以及不同工艺参数对表面应力分布和表面去除形貌的影响。通过计算机控制精密研抛工艺对碳化硅进行研抛试验,进一步分析了各工艺参数下表面形貌的变化,结果表明,较小的主轴转速、较大的磨粒尺寸和研抛深度对工件表面破碎损伤严重,而进给速度对工件表面去除效果的影响不明显,不同工艺参数对表面损伤影响变化趋势与模拟分析结果吻合较好。研究结果对于选择合理的研抛工艺参数以获得良好的表面质量具有重要意义。
Silicon carbide in polishing process easily causes surface damage,affecting the workpiece surface quality and fatigue performance. Based on the removal mechanism of hard and brittle materials in polishing process,a finite element analysis model is established. The process of single particle polishing is simulated,and the influence of different polishing parameters on the surface stress distribution and removal morphology is analyzed. The polishing experiments are carried out in accordance with the computer-controlled precision polishing process,to further analyze the changes of the surface morphology under different process parameters. The results reveal that the smaller spindle speed,larger abrasive size and polishing depth seriously damage the workpiece surface,while the effect of the feed rate on the removal of the workpiece surface is not obvious;the influence trends of the surface quality of experimental results at different process parameters match well with the simulation results. The research results are meaningful and helpful for the selection of reasonable polishing parameters in order to obtain good surface quality in the silicon carbide polishing process.
作者
谷岩
朱文慧
林洁琼
孙建波
GU Yan;ZHU Wen-hui;LIN Jie-qiong;SUN Jian-bo(School of Mechanical Engineering,Changchun University of Technology,Jilin Changchun130012,China)
出处
《机械设计与制造》
北大核心
2020年第1期68-71,共4页
Machinery Design & Manufacture
基金
吉林省科技厅重点项目（20140622008JC
20160520072JH
2016101340JC）
国家科技部国际合作项目—信息使能的复杂光机功能部件制造关键技术研究（2016YFE0105100）
关键词
碳化硅
表面损伤
有限元仿真
应力分布
计算机控制精密研抛
Silicon Carbide
Surface Damage
Finite Element Method
Stress Distribution
Computer Controlled Precision Polishing
