期刊文献+

飞秒激光单路径刻蚀硅微槽深度研究 被引量:1

Study on Depth of Single-Path Etching Silicon Microgroove by Femtosecond Laser
下载PDF
导出
摘要 对飞秒激光在单晶硅片上单路径加工微槽进行了研究。在固定激光频率和进给深度的条件下,对不同激光功率、扫描次数以及扫描速度对微槽深度的影响展开对比试验,通过COMSOL软件对激光加工硅片温度分布及微槽内激光反射进行数值分析。研究发现,微槽截面形状与激光能量分布特点相关,高频飞秒激光的热累积效应易氧化微槽底部,限制了激光对其的进一步加工;等离子体的屏蔽效应则使得微槽深度随着扫描速度先增大后减小。 In this paper,the microgrooves processing by femtosecond laser with Single-Path on monocrystalline silicon wafer is studied.Under the conditions of fixed laser frequency and feed depth,the effects of various laser powers,scanning times and scanning speeds on the depth of microgrooves were compared.The temperature distribution of laser processing wafers and the laser reflection in microgrooves were numerically analyzed by COMSOL software.It is found that the cross-section shape of the microgroove is related to the laser energy distribution characteristics.The thermal accumulation effect of the high-frequency femtosecond laser causes the bottom of the micro-groove to be oxidized,which limits the further processing of the laser.The shielding effect of plasma makes the depth of microgroove increase first and then decrease with scanning speed.
作者 张耀文 汪世益 王子威 ZHANG Yaowen;WNAG Shiyi;WANG Ziwei(School of Mechanical Engineering,Anhui University of Technology,Ma’anshan 243000)
出处 《现代制造技术与装备》 2019年第12期90-93,共4页 Modern Manufacturing Technology and Equipment
关键词 飞秒激光 微槽 氧化 等离子体屏蔽 femtosecond laser silicon microgroove oxidized shielding effect of plasma
  • 相关文献

参考文献5

二级参考文献16

共引文献15

同被引文献12

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部