摘要
针对结构参数对TSV可靠性影响不明确的问题,文中采用有限元分析和模型简化的方法,分析了TSV结构在温度循环条件下的应力应变分布,并进一步研究了铜柱直径、SiO 2层厚度以及TSV节距等结构参数对TSV结构可靠性的影响。结果表明,采用文中的方法简化模型后得出的结果拟合度在0.95以上;在TSV结构上施加温度循环载荷时,在SiO 2界面会出现应力集中,而在钝化层中会出现应变增大;改变铜柱直径、绝缘层厚度和TSV节距将显著影响TSV结构的可靠性;减小填充铜的直径、增加SiO 2层的厚度、增加TSV节距,都将有助于减小TSV结构的最大应力。
Aiming at the problem that the influence of structural parameters on the reliability of TSV is not clear,the finite element analysis and model simplification method were used to analyze the stress-strain distribution of TSV structure under temperature cycling conditions.The effect of structural parameters including copper pillar diameter,SiO layer thickness and TSV pitch on the reliability of TSV structure were further studied.The results showed that the fitting degree of the results obtained by simplifying the model was above 0.95.When the temperature cyclic load was applied to the TSV structure,stress concentration would occur at the SiO interface,and strain increase would occur in the passivation layer.Changing the copper column diameter,insulation thickness and TSV pitch could significantly affect the reliability of the TSV structure.Reducing the diameter of the filled copper,increasing the thickness of the SiO layer,and increasing the TSV pitch all helped to reduce the maximum stress of the TSV structure.
作者
刘建松
林鹏荣
黄颖卓
练滨浩
LIU Jiansong;LIN Pengrong;HUANG Yingzhuo;LIAN Binhao(Beijing Microelectronics Technology Institute,Beijing 100076,China)
出处
《电子科技》
2020年第1期46-50,共5页
Electronic Science and Technology
基金
北京市自然科学基金(4172065)~~
关键词
TSV
有限元分析
模型简化
温度循环
结构参数
应力集中
TSV
finite element analysis
model simplification method
structural parameters
temperature cycling
stress concentration
