摘要
AlGaN是一种宽带半导体材料,随着材料中Al含量的不同,其禁带宽度有所不同,可以实现从3.4~6.2 e V。基于外光电效应原理,用AlGaN制成的光阴极因Al含量的不同,其长波阈值也有所不同。本文对5条AlGaN光阴极光谱曲线,采用数值计算的方法,从背景噪声、有效信号、光谱信噪比等方面进行对比分析,并通过以上参数对日盲紫外探测器特性进行评价。经研究发现,可以通过光谱响应曲线对探测器日盲特性进行评价。光谱信噪比越好,则日盲探测器性能越好。这为用户提供了一种评价探测器日盲特性的方法。
AlGaN is a wide band gap semiconductor material, with a forbidden bandwidth that varies with change in Al content, from 3.4 eV to 6.2 eV. Based on the principle of the external photoelectric effect, it is evident that the long wave threshold value of the AlGaN photocathode varies with change in its Al content. This study proposes the use of new measures, the background noise, effective signal, and the spectral signal-noise ratio, by which we perform a comparative analysis of five kinds of AlGaN photocathode spectral response curves and evaluate the solar-blindness of the corresponding UV detectors. According to the comparison, the target detection ability can be illustrated by the spectral response curve. A greater spectral signal-noise ratio and a smaller background signal-noise ratio correspond to improved detector solar-blindness. The concepts proposed in this study provide technical support for a user to select the proper solar blind ultraviolet detector according to the spectral response curve.
作者
程宏昌
石峰
闫磊
任彬
拜晓锋
CHENG Hongchang;SHI Feng;YAN Lei;REN Bin;BAI Xiaofeng(Science and Technology on Low-Light-level Night Vision Laboratory,Xi’an 710065,China;Kunming Institute of Physics,Kunming 650223,China)
出处
《红外技术》
CSCD
北大核心
2019年第12期1156-1160,共5页
Infrared Technology
关键词
AlGaN光阴极
光谱响应
日盲
AlGaN photocathode
spectral response
solar-blindness