摘要
研制了具有高频高增益特性的硅LDMOS芯片,采用0.35μm精细栅实现高频率性能,CoSi2/PolySi栅工艺技术降低电阻,Ti/W金属场板优化漂移区电场分布降低反馈电容,并采用等平面工艺技术提高芯片一致性。采取参数仿真优化内匹配设计,并通过多个LDMOS芯片合成实现大功率输出。最终实现的S波段大功率硅LDMOS器件性能为:在32 V工作电压,3.1~3.5 GHz频带内,300μs脉宽,15%占空比的工作条件下,输出功率大于200 W,增益大于9 dB,效率大于42%。
A high frequency and high gain silicon LDMOS transistor was developed,which used 0.35μm gate to achieve high frequency performance,CoSi2/PolySi gate technology to reduce gate resistance,Ti/W metal plate optimized field in drift region to reduce feedback capacitance,and isoplanar process was adopted to improve LDMOS chip uniformity.By optimizing parameter simulation internal matching design and utilizing multi-chip synthesis,high power output was obtained.The final characters of the S-band LDMOS transistor are as follows:under the condition of 32 V supply voltage,3.1~3.5 GHz operating frequency,300μs pulse width and 15%duty cycle,the output power of transistor is over 200 W,power gain is more than 9 dB and efficiency is higher than 42%.
作者
刘洪军
赵杨杨
鞠久贵
杨兴
王佃利
杨勇
LIU Hongjun;ZHAO Yangyang;JU Jiugui;YANG Xing;WANG Dianli;YANG Yong(Nanjing Electronic Devices Institute,Nanjing, 210016,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2019年第5期333-338,共6页
Research & Progress of SSE
关键词
硅横向扩散金属-氧化物-半导体
S波段
功率管
Si lateral diffusion metal-oxide-semiconductor(LDMOS)
S-band
power transistor
