摘要
CdS单晶是一种电学和光学性能优异的Ⅱ-Ⅵ族直接带隙半导体材料,近年受到人们的广泛关注。但是大尺寸CdS单晶在生长过程中易形成孔洞缺陷,质量难以控制,使其电学性能不稳定,制约着晶体的实际应用。采用物理气相传输(PVT)法成功地生长了尺寸为55 mm×15 mm的CdS单晶,对CdS单晶中孔洞产生的过程、孔洞形成的原因进行了分析和研究,进而提出了改进的CdS晶体生长技术,降低了晶体孔洞缺陷的密度,提高了CdS晶体的质量。在25~300 K,对采用改进生长方法生长的大尺寸CdS单晶进行了霍尔迁移率、载流子浓度和电阻率等测试,其迁移率最高可达7 000 cm2·V^-1·s^-1,为大尺寸CdS单晶在器件中的实际应用提供了重要的数据支撑。
Cd S single crystal is a kind of Ⅱ-Ⅵ direct band gap semiconductor materials with excellent electrical and optical properties. It has attracted more and more attention in recent years. However,void defects are easily to be formed in these large size Cd S single crystals during the growth process. Cd S quality is difficult to control,which makes the electrical properties of Cd S crystals unstable and restricts their practical applications. Cd S single crystals with the size of 55 mm×15 mm were successfully grown by physical vapor transport( PVT) method. The process and causes of voids formation in the Cd S single crystal were analyzed and studied. Furthermore, an improved Cd S crystal growth technology was proposed,which reduces the density of the void defects and improves the quality of the Cd S crystals. At25-300 K,Hall mobility,carrier concentration and specific resistivity of the large size Cd S single crystal grown by the improved growth method were tested,and the mobility is up to 7 000 cm2·V^-1·s^-1,which provides important data support for the practical application of large size Cd S single crystals in devices.
作者
霍晓青
程红娟
于凯
赵堃
王健
金雷
Huo Xiaoqing;Cheng Hongjuan;Yu Kai;Zhao Kun;Wang Jian;Jin Lei(The 46th Research Institute,CETC,Tianjin 300220,China)
出处
《半导体技术》
CAS
北大核心
2019年第11期899-904,共6页
Semiconductor Technology
基金
supported by the National Natural Science Foundation of China(51702297,11847120)
