摘要
半导体硅的传统制备工艺主要有直拉法、区熔法及气相沉积法等,这些制备工艺都需要在高温下进行,且涉及到大型设备,制备成本较高,操作较为复杂。采用低温电沉积法制备硅具有简单可控、低成本的特点,因而受到了研究者青睐。主要从电极、溶剂的选取及电沉积方法等方面阐述了低温电沉积硅工艺研究现状,同时对低温电沉积硅存在的问题和发展趋势进行了讨论。
Traditional preparation processes of silicon mainly include Czochralski,zone melting and vapor deposition method.Operation of these methods needs high temperature,large-scale equipments,complicated operation and high cost.Electrodeposited silicon at low temperature is favored by researchers due to its advantages of simple,controllable and low-cost preparation.Research status of low temperature electrodeposited silicon process is comprehensive overviewed,including selection of electrode and solvent,and electrodeposition method.Furthermore,Problems and development trends of low temperature electrodeposited silicon are discussed.
作者
巫亮
赵占霞
张承龙
WU Liang;ZHAO Zhan-xia;ZHANG Cheng-long(Department of Physics,Shanghai University,Shanghai 200444,China;WEEE Research Centre of Shanghai Polytechnic University,Shanghai 201209,China)
出处
《有色金属（冶炼部分）》
CAS
北大核心
2019年第10期67-73,共7页
Nonferrous Metals（Extractive Metallurgy)
基金
国家自然科学基金资助项目(51474146)
上海市高原学科—环境科学与工程(资源循环科学与工程)资助项目
上海第二工业大学校重点学科(XXKZD1602)
关键词
低温
电沉积
硅
工艺
进展
low temperature
electrodeposition
silicon
technology
process
