摘要
建立了N型结场效应晶体管(JFET)在电磁干扰下的2维电热模型,在栅极分别注入高功率微波(HPM)和强电磁脉冲(EMP)时,对工作在饱和区的JFET晶体管的瞬态响应进行了仿真分析。结果表明,注入HPM时,器件内部的峰值温度呈周期性的"升高-下降-升高"变化规律,在信号工作的正、负周期,器件内部峰值温度均呈上升趋势,在器件的栅极和源极出现了2个烧毁点;注入EMP时,器件内部峰值温度上升呈"快速-缓慢-急剧"的变化趋势,易损伤部位出现在源极下方近栅极处,损伤机理与注入HPM时的正半周期损伤机理相似。通过拟合分析,分别得到了HPM和EMP注入下,能量损伤阈值和功率损伤阈值随脉宽的变化关系,并通过比较发现,在相同的脉宽下,注入EMP比注入HPM需要更少的能量和功率就可以毁伤器件。
A two-dimensional electrothermal model of N type junction field effect transistor(JFET)under electromagnetic interference is established.The transient behaviors of the JFET working in saturated region are simulated and analyzed when high power microwave(HPM)and electromagnetic pulse(EMP)are injected into the gate,respectively.The results show that the peak temperature variation has a periodic rule of"rising-falling-rising"and the temperature rise occurs in both positive and negative half-periods during the different signal time periods,and there are two burn-out points appearing at the gate and the source when HPM signals are injected into the device.When the device is injected by EMP,the rising rate of peak temperature shows a"fast,slow and sharp"trend with the increase of time and the vulnerable parts appear below the source(near the gate),the damage mechanism is similar to that of HPM injection.Finally,the dependence relations of damage energy and damage power of EMPs and HPMs on pulse-width are obtained in a nanosecond range.It is found that with the same pulse-width,EMP injection requires less energy and power to destroy the device than that of HPM injection.
作者
李赟
柴常春
李阳
吴涵
杨银堂
LI Yun;CHAI Chang-chun;LI Yang;WU Han;YANG Yin-tang(School of Microelectronics,Xidian University,Xi’an 710071,China;Key laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xi’an 710071,China)
出处
《现代应用物理》
2019年第3期22-28,共7页
Modern Applied Physics
基金
中国工程物理研究院综合电磁环境科学技术重点实验室开放基金资助项目(2015-0214.XY.K)
