摘要
功率管在空间辐射环境下会发生沟道边缘漏电,导致功率集成电路性能退化。介绍了一种0.35μm单片集成(BCD)工艺下基于华夫饼结构的全新功率管版图,并对普通条形栅结构N沟道功率管和新型华夫饼结构N沟道功率管进行了Co-60辐射实验。总剂量辐射使N沟道条形栅功率管发生漏电。辐射实验结果表明,经过无边缘化处理的华夫饼结构可以有效控制总剂量辐射诱发的漏电,能够大幅提升功率管的抗总剂量辐射能力。
Power Metal Oxide Semiconductor Field Effect Transistor(MOSFET)is widely used in power Integrated Circuit(IC).Radiation in space may cause the leakage current at the edge of the channel in power MOSFET,which will lead to the degeneration of power IC.This paper presents a new waffle layout for power MOSFET in 0.35μm Bipolar CMOS DMOS(BCD)process.Packaged power MOSFETs with finger and waffle layout are tested after Co-60 based irradiation experiment.The Total Ionizing Dose(TID)radiation induces the leakage current only in N-channel power MOSFET with finger layout.The presented waffle layout with its edgeless structure is proved to be effective to control the leakage current,which enhances the TID-tolerance of power MOSFET a lot.
作者
周枭
罗萍
何林彦
肖天成
ZHOU Xiao;LUO Ping;HE Linyan;XIAO Tiancheng(State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China,Chengdu Sichuan 610054,China)
出处
《太赫兹科学与电子信息学报》
北大核心
2019年第4期730-734,共5页
Journal of Terahertz Science and Electronic Information Technology
基金
国家自然科学基金联合基金(NSAF)资助项目(U1630117)
关键词
总剂量辐射
功率管
华夫饼结构
漏电流
total ionizing dose radiation
power MOSFET
waffle layout
leakage current
