摘要
Synchrontron radiation x-ray reflectivity measurement is used to study the concentration profile of a δ-doped Er layer in Si epitaxial film grown by molecular-beam epitaxy.The oscillation of the reflectivity amplitude as a function of reflection angle is observed in the experiment.By doing a theoretical simulation.the concentration profile of Er atoms could be deried.It is shown that the originally grown δ-doped Er layer changes into an expionentially decayed function due to the Er segregation.The temperature dependence of the 1/e decay length indicates that the segregation is a kinetically limited process.The activation energy is determined to be 0.044±0.005eV.
