摘要
使用电沉积方法在溶解有Zn(NO3)2、NH4NO3、Al(NO3)3的水溶液中制备出Al掺杂的ZnO纳米柱阵列。电解液中添加的NH4NO3抑制了添加Al(NO3)3导致的层状纳米结构的生长,可得到高质量的ZnO纳米柱阵列。通过控制电解液中Al(NO3)3的浓度可操控所制备的ZnO纳米柱阵列的直径、密度、间距和Al/Zn的重量比。Al掺杂引起ZnO纳米柱内部载流子浓度增加,在布尔斯坦-莫斯效应作用下,纳米柱的光学带隙蓝移至3.64~3.65 eV。ZnO纳米柱内部的非辐射复合导致其近带边发射产生215~225 meV的斯托克斯位移。
A preparation process for Al-doped ZnO nanorod arrays by electrodeposition from an aqueous solution of Zn( NO3)2,NH4NO3 and Al( NO3)3was established. The inevitable growth of the layered nanostructures due to the use of Al( NO3)3was suppressed by the use of NH4NO3. Consequently,the use of the additives results in the fabrication of the high quality ZnO nanorod arrays.In addition,the properties of ZnO nanorods such as the diameter,density,distance,and weight ratio of Al /Zn were adjusted by controlling the Al( NO3)3concentration in the electrolyte. The increase of the carrier concentration as a result of Al doping leads to the blue shift of the optical band gap in ZnO nanorods( 3. 64- 3. 65 eV),which is ascribed to the Burstein-Moss effect. The Stokes shift of Al-doped ZnO nanorods is in the range of 215- 225 meV,indicating a large nonradiative recombination in the nanorods.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2014年第10期1165-1171,共7页
Chinese Journal of Luminescence
基金
国家自然科学基金(61404007)资助项目
