摘要
本文报道分别以Ti Si C ,Ti SiC C为原料 ,采用放电等离子烧结工艺制备Ti3SiC2 材料的研究结果。以元素单质粉为原料 ,掺加适量Al作助剂能加速Ti3SiC2 的反应合成并提高材料的纯度 ,在 12 0 0～ 12 5 0℃的温度下能制备出经XRD、SME和EDS表征不含TiC和SiC等杂质相的纯净Ti3SiC2 材料。而以Ti SiC C为原料时 ,有无Al作助剂都难以制备出纯净的Ti3SiC2 。
It is reported that fabrication of Ti 3SiC 2 material by spark plasma sintering from Ti/Si/C,and Ti/SiC/C respectively.When elemental powders were used,proper addition of aluminum enhanced the reaction synthesis,and improved the purity ofthe material.Moreover,characterized by XRD、SEM,pure Ti\-3SiC\-2 material without TiC or SiC could be obtained by sintering samples at 1200～1250℃.However,when Ti/SiC/C was used as raw materials,addition of aluminum had less help for the samples,and it was difficult to prepare pure Ti\-3SiC\-2 material with or without the addition of aluminum.
出处
《材料科学与工程》
CSCD
北大核心
2002年第4期564-567,共4页
Materials Science and Engineering
基金
国家自然科学基金资助项目 (50 1 72 0 37)
教育部博士点基金资助项目(2 0 0 0 0 4 970 2 )
