摘要
文章基于分子束外延法(molecular beam epitaxy,MBE)制备高质量的硒化铋(Bi 2Se 3)薄膜,运用反射式高能电子衍射仪(reflection high-energy electron diffraction,RHEED)表征样品的生长质量。在Bi 2Se 3和Ge上将蒸镀铟(In)电极和银(Ag)电极分开,并将其制成肖特基结光电探测器,据此测量了样品在不同波长激光和不同温度下的光响应特性及低温对样品的影响,并通过计算样品的响应度、开关比、探测率等参数分析了拓扑绝缘体在光电探测方面的应用前景。
In this paper, high-quality bismuth selenide(Bi2Se3) thin films were prepared by molecular beam epitaxy(MBE) on semiconductor germanium. The reflection high-energy electron diffraction(RHEED) was used to characterize the growth quality of the samples. Indium and silver electrodes were deposited on Bi2Se3 and Ge, respectively, and they were fabricated into Schottky junction photodetectors. The photoresponses of the samples at different wavelengths of laser light and different temperatures were measured, and the influence of low temperature on the samples was analyzed. The application prospects of topological insulators in photoelectric detection were analyzed by calculating the responsivity, on-off ratio, detection rate and other parameters of the samples.
作者
周勇
仇怀利
王朝东
徐伟
陈实
李中军
ZHOU Yong;QIU Huaili;WANG Chaodong;XU Wei;CHEN Shi;LI Zhongjun(School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230601, China)
出处
《合肥工业大学学报（自然科学版）》
CAS
北大核心
2019年第10期1353-1356,共4页
Journal of Hefei University of Technology：Natural Science
基金
国家自然科学基金资助项目(21503061)
安徽省自然科学基金资助项目(1708085ME122)
关键词
拓扑绝缘体
硒化铋
锗
分子束外延
光响应
topological insulator
bismuth selenide
germanium
molecular beam epitaxy(MBE)
photoresponse
