摘要
采用旋涂法制备了基于铁电聚合物薄膜的Al/PVDF/SiO2/n-Si(MFIS)结构.通过测量MFIS结构的电容-频率特性和电容-电压特性,观察到负电容效应.测量频率越低,正向偏压越大,负电容效应越显著.在时域中,施加脉冲电压,出现瞬态电流随时间增大的电感现象.研究结果表明,MFIS结构中的负电容效应是一种电感现象.构建能带图分析MFIS结构中负电容效应的产生原因,是由于大量电子注入到界面中被捕获使得电流的相位落后于电压导致.基于铁电薄膜的负电容MFIS结构有望应用于低功耗器件中.
Ferroelectric Al / PVDF / SiO2 / n-Si thin film structures were prepared by spin coating. Capacitance-frequency and capacitance- voltage characteristics were measured which exhibit negative capacitance. The negative capacitance becomes more pronounced at lower frequency and higher positive bias. In the time domain, transient current upon a voltage step firstly decreases and then increases with time which shows inductive behavior after charging. Negative capacitance effect in the frequency domain is consistent with inductive behavior in the time domain. The energy band diagram of the structure was constructed. The physical process for the negative capacitance in structures is electron injection and trapped electrons at the interfaces, leading to a phase shift between applied voltage and resulting current. The negative capacitance effect for the ferroelectric structures are promising for low power devices applications.
作者
麦满芳
朱传云
李矩明
马信洲
MAI Manfang;ZHU Chuanyun;LI Juming;MA Xinzhou(School of Physics and Optoelectronic Engineering,Foshan University,Foshan 528225,Guangdong Province,China;School of Material Science and Energy Engineering,Foshan University,Foshan 528225,Guangdong Province,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2019年第11期10-13,共4页
Electronic Components And Materials
基金
国家自然科学基金(11504242)
佛山科学技术学院高层次人才科研启动项目(gg07049)
关键词
负电容
铁电薄膜
PVDF
MFIS结构
电感
negative capacitance
ferroelectric thin films
PVDF
NFIS structure
inductance
