摘要
碲镉汞雪崩光电二极管以其高增益、高灵敏度和高速探测的优点成为第3代红外光电探测器的重要发展方向之一.制备了截止波长3.56μm的雪崩光电二极管焦平面器件,面阵规模为16×16.焦平面器件在0~6V偏压下有效像元率大于90%,非均匀性小于20%.6 V偏压下NEPh约为60,过剩噪声因子为1.2.
HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. In this paper we report the result on a 1616 arrays of HgCdTe avalanche photodiode with 3.56 μm cutoff wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor close to 1.2.
作者
李浩
林春
周松敏
郭慧君
王溪
陈洪雷
魏彦锋
陈路
丁瑞军
何力
LI Hao;LIN Chun;ZHOU Song-Min;GUO Hui-Jun;WANG Xi;CHEN Hong-Lei;WEI Yan-Feng;CHEN Lu;DING Rui-Jun;HE Li(Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Science,Shanghai 200083,China;University of Chinese Academy of Science,Beijing 100049,China;ShanghaiTech University,Shanghai 201210,China)
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2019年第5期587-590,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金(61705247)~~
