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基于磁隔离方案的IGBT并联均流特性优化设计

Optimum Design of IGBT Parallel Current Sharing Characteristic Based on Magnetic Isolation Scheme
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摘要 为了提髙整流器的功率密度并降低成本,通常采用多绝缘栅双极型晶体管(IGBT)并联的方式来搭建电力电子组件模块(PEBB)功率模块。针对IGBT并联应用中的输出铜排结构对均流特性的影响,进行了理论分析和仿真验证,得出铜排布局结构产生的互感参数对均流特性有较大影响。提出采用磁隔离方案来改变铜排之间互感参数的方式,对IGBT的并联特性进行优化,通过4个IGBT并联平台验证所提方案的效果。 In order to improve the power density and reduce the cost of rectifier, power electronic building block (PEBB) power module is usually built by several parallel connected insulated gate bipolar transistor (IGBT). Considering the influence of output copper bar structure on current sharing characteristics in IGBT parallel application, the theoretical analysis and simulation verification are carried out, it is concluded that the mutual inductance parameters produced by the layout structure of copper bars have a great influence on the currenl sharing characteristics. A method of changing mutual inductance parameters between copper bars by magnetic isolation is proposed which optimized the current sharing characteristics of paralleled IGBT.And the result of the mentioned method is proved by a four paralleled IGBT experimental platform.
作者 李延峰 颜世灿 井晓 LI Yan-feng;YAN Shi-can;JING Xiao(l.A otai Electric Co.,Ltd.,Jinan 250101,China)
出处 《电力电子技术》 CSCD 北大核心 2019年第9期70-72,76,共4页 Power Electronics
关键词 绝缘栅双极型晶体管 均流 磁隔离 insulated gate bipolar transistor current sharing magnetic isolation
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