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Graphite addition for SiC formation in diamond/SiC/Si composite preparation

Graphite addition for SiC formation in diamond/SiC/Si composite preparation
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摘要 Herein, graphite was used in the Si-vapor reactive infiltration of diamond/SiC/Si composites to produce composites with various Si C contents. X-ray diffraction was used to determine the phases of the composite, whereas scanning electron microscopy was used to confirm the Si–C reaction between the silicon, graphite, and diamond and to observe the SiC morphology. Various SiC contents in the composite were observed with graphite addition. Furthermore, the reaction between silicon and graphite(diamond) produced coarse(fine) SiC particles. The generation of a 10-μm-diameter Si–C area on the surface of the diamond was observed. The thermal conductivity(TC) and coefficient of thermal expansion(CTE) of the composite was investigated, where the TC varied from 317–426 W·m^-1·K^-1 with the increase of the SiC volume fraction from 38% to 76% and the corresponding CTE increased from 1.7 × 10^-6 to 3.7 × 10^-6 K^-1, respectively. Furthermore, a critical point for the CTE was found to exist at approximately 250℃, where the composite was under a hydrostatic condition. Finally, the bending strength was found to range from 241 to 341 MPa. Herein, graphite was used in the Si-vapor reactive infiltration of diamond/SiC/Si composites to produce composites with various Si C contents. X-ray diffraction was used to determine the phases of the composite, whereas scanning electron microscopy was used to confirm the Si–C reaction between the silicon, graphite, and diamond and to observe the SiC morphology. Various SiC contents in the composite were observed with graphite addition. Furthermore, the reaction between silicon and graphite(diamond) produced coarse(fine) SiC particles. The generation of a 10-μm-diameter Si–C area on the surface of the diamond was observed. The thermal conductivity(TC) and coefficient of thermal expansion(CTE) of the composite was investigated, where the TC varied from 317–426 W·m-1·K-1 with the increase of the SiC volume fraction from 38% to 76% and the corresponding CTE increased from 1.7 × 10-6 to 3.7 × 10-6 K-1, respectively. Furthermore, a critical point for the CTE was found to exist at approximately 250℃, where the composite was under a hydrostatic condition. Finally, the bending strength was found to range from 241 to 341 MPa.
出处 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2019年第9期1166-1176,共11页 矿物冶金与材料学报(英文版)
基金 financially supported by the National Key R&D Program of China (Nos. 2016YFB0301402 and 2016YFB0301400) the National Natural Science Foundation of China (No. 51274040)
关键词 DIAMOND SIC GRAPHITE DIFFUSION composite diamond SiC graphite diffusion composite
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