摘要
Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices.For epitaxially grown graphene,the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface energies.Utilizing angle-resolved photoemission spectroscopy,here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111)alloy film by chemical vapor deposition.With a relatively low growth temperature,graphene on Cu/Ni(111)exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111).The linear dispersions forming Dirac cone are as wide as 2 e V,with the Fermi velocity of approximately 1.1×10^6 m/s.Dirac cone opens a gap of approximately 152 meV at the binding energy of approximately 304 meV.Our findings would promote the study of engineering of graphene on different substrate materials.
Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic devices. For epitaxially grown graphene, the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface energies. Utilizing angle-resolved photoemission spectroscopy, here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film by chemical vapor deposition. With a relatively low growth temperature, graphene on Cu/Ni(111) exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111). The linear dispersions forming Dirac cone are as wide as 2 e V, with the Fermi velocity of approximately 1.1×10~6 m/s. Dirac cone opens a gap of approximately 152 meV at the binding energy of approximately 304 meV. Our findings would promote the study of engineering of graphene on different substrate materials.
作者
Xue-Fu Zhang
Zhong-Hao Liu
Wan-Ling Liu
Xiang-Le Lu
Zhuo-Jun Li
Qing-Kai Yu
Da-Wei Shen
Xiao-Ming Xie
张学富;刘中灏;刘万领;卢祥乐;李卓君;于庆凯;沈大伟;谢晓明(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology (SIMIT),Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Physical Science and Technology,Shanghai Tech University,Shanghai 200031,China;CAS Center for Excellence in Superconducting Electronics (CENSE),Shanghai 200050,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.51772317,11604356,and 11704394)
