摘要
In this work, a soliton mode-locked erbium-doped fiber laser(EDFL) with a high-quality molecular beam epitaxy(MBE)-grown topological insulator(TI) Bi2Se3 saturable absorber(SA) is reported.To fabricate the SA device, a 16-layer Bi2Se3 film was grown successfully on a 100 μm thick SiO2 substrate and sandwiched directly between two fiber ferrules.The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm^2.After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz.The output central wavelength, pulse energy,pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 p J, 1.08 ps, and 60d Bm, respectively.These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.
In this work, a soliton mode-locked erbium-doped fiber laser（EDFL） with a high-quality molecular beam epitaxy（MBE）-grown topological insulator（TI） Bi2Se3 saturable absorber（SA） is reported. To fabricate the SA device, a 16-layer Bi2Se3 film was grown successfully on a 100 μm thick SiO2 substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm2.After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength, pulse energy,pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 p J, 1.08 ps, and 60d Bm, respectively. These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.
作者
Runlin Miao
Mingyu Tong
Ke Yin
Hao Ouyang
Zhenyu Wang
Xin Zheng
Xiang’ai Cheng
Tian Jiang
苗润林;童明玉;殷科;欧阳昊;王振宇;郑鑫;程湘爱;江天(College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China;National Innovation Institute of Defense Technology,Academy of Military Sciences PLA China,Beijing 100071,China;State Key Laboratory of High Performance Computing,College of Computer,National University of Defense Technology,Changsha 410073,China)
基金
supported by the National Natural Science Foundation of China(Nos.11802339,11805276,61805282,61801498,and 11804387)
the China Postdoctoral Innovation Science Foundation(No.BX20180373)
the Scientific Researches Foundation of National University of Defense Technology(Nos.ZK16-03-59,ZK18-01-03,ZK18-03-36,and ZK18-03-22)
the Natural Science Foundation of Hunan Province(No.2016JJ1021)
the Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology(No.SKL2018ZR05)
the Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology(No.GNJGJS03)
the Opening Foundation of State Key Laboratory of Laser Interaction with Matter(No.SKLLIM1702)
the Youth Talent Lifting Project(No.17-JCJQ-QT-004)
