摘要
为了分析碳化硅和硅两种材料的场效应晶体管的短路失效机理,利用半导体器件模拟软件建立了能够反映碳化硅场效应晶体管和硅场效应晶体管短路失效的数值模型。模型引入了自热效应模拟高电应力下晶体管内部温度变化及热传递过程,引入了福勒-诺德海姆(Fowler-Nordheim)隧穿和蒲尔-弗朗克(Poole-Frenkel)发射模拟氧化层的泄漏电流;短路实验结果验证了所建立的数值模型的准确性。通过对比两种晶体管数值模型在相同的短路条件下栅极驱动电压的变化、晶体管内电流线和温度的分布,结果表明,碳化硅场效应晶体管的短路失效主要是晶体管内的温度传递到表面引起金属电极的熔化以及栅极氧化层的严重退化,而硅场效应晶体管的短路失效是由于寄生双极型晶体管的导通导致其体内泄漏电流不可控而引起的灾难性的破坏。
To analyze the failure mechanisms of the silicon carbide field-effect transistor (SiC MOSFET) and silicon field-effect transistor (Si MOSFET) under the short-circuit condition,numerical models for the silicon carbide field-effect transistor and silicon field-effect transistor have been built by technology computer aided design (TCAD),which can replicate the short-circuit failure of the silicon carbide field-effect transistor and silicon field-effect transistor.In the numerical models,the self-heating effect has been introduced to simulate the temperature change and thermal transmission inside the device,and the Fowler-Nordheim tunneling effect and Poole-Frenkel emission simulate the leakage current of the gate oxide.Experimental results have verified the numerical models.With the numerical models,the change of the gate driving voltage,the distribution of current flowlines and the temperature inside the two devices have been compared.The results have shown that the short-circuit failure of the silicon carbide field-effect transistor originates from the metal melting of the gate surface electrode and serious oxide degradation.By contrast,the short-circuit failure for the silicon field-effect transistor comes from the triggering of the parasitic bipolar transistor.As a result,the leakage current inside the silicon field-effect transistor is out of control,which leads to the catastrophic damage.
作者
周郁明
蒋保国
陈兆权
王兵
ZHOU Yuming;JIANG Baoguo;CHEN Zhaoquan;WANG Bing(Anhui Provincial Key Laboratory of Power Electronics and Motion Control,Anhui University of Technology,Maanshan 243002,China)
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
2019年第4期66-73,共8页
Journal of Xidian University
基金
国家自然科学基金（11575003）
安徽省高校优秀青年人才重点项目（gxyqZD2016068）
安徽大学信息保障技术协同创新中心开放课题（ADXXBZ201705）
关键词
碳化硅
场效应晶体管
短路失效
寄生双极型晶体管
退化
silicon carbide
field-effect transistor
short-circuit failure
parasitic bipolar transistor
degradation
