摘要
Defect passivation is an important strategy to achieve perovskite solar cells(PVSCs) with enhanced power conversion efficiencies(PCEs) and improved stability because the trap states induced by defects in the interfaces and grain boundaries of perovskites are harmful to both large open circuit voltage and high photocurrent of devices. Here, zinc cations(Zn^2+) were used as a dopant to passivate defects of the CsPbI2Br perovskite leading to Zn^2+-doped CsPbI2Br film with fewer trap states, improved charge transportation, and enhanced light-harvesting ability. Thus, the best-performance PVSC based on CsPbI2 Br with the optimal Zn^2+doping shows a higher PCE of 12.16% with a larger open-circuit voltage(VOC) of 1.236 V, an improved shortcircuit current(JSC) of 15.61 mA cm^-2 in comparison with the control device based on the pure CsPbI2Br which exhibits a PCE of 10.21% with a VOCof 1.123 V, a JSCof 13.27 mA cm^-2. Time-resolved photoluminescence results show that the Zn^2+doping leads to perovskite film with extended photoluminescence lifetime which means a longer diffusion length and subsequently enhanced photocurrent and open circuit voltage. This work provides a simple strategy to boost the performance of PVSCs through Zn^2+doping.
Defect passivation is an important strategy to achieve perovskite solar cells（PVSCs） with enhanced power conversion efficiencies（PCEs） and improved stability because the trap states induced by defects in the interfaces and grain boundaries of perovskites are harmful to both large open circuit voltage and high photocurrent of devices. Here, zinc cations(Zn2+) were used as a dopant to passivate defects of the CsPbI2Br perovskite leading to Zn2+-doped CsPbI2Br film with fewer trap states, improved charge transportation, and enhanced light-harvesting ability. Thus, the best-performance PVSC based on CsPbI2 Br with the optimal Zn2+doping shows a higher PCE of 12.16% with a larger open-circuit voltage(VOC) of 1.236 V, an improved shortcircuit current(JSC) of 15.61 mA cm-2 in comparison with the control device based on the pure CsPbI2Br which exhibits a PCE of 10.21% with a VOCof 1.123 V, a JSCof 13.27 mA cm-2. Time-resolved photoluminescence results show that the Zn2+doping leads to perovskite film with extended photoluminescence lifetime which means a longer diffusion length and subsequently enhanced photocurrent and open circuit voltage. This work provides a simple strategy to boost the performance of PVSCs through Zn2+doping.
基金
supported by the National Natural Science Foundation of China (U1605241)
the Key Research Program of Frontier Sciences, CAS (QYZDB-SSW-SLH032)
the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB20030300)
