摘要
理论提出并研究了一种在交叉型纳米结构下运用非均匀极化门方案获得孤立阿秒脉冲的方法.结果表明,当气体沿纳米结构负方向注入时,用于产生阿秒脉冲的高阶谐波只发生在纳米结构的一侧.因此,在此方案下,不仅谐波截止能量得到延伸,而且谐波干涉结构得到减小.随后,通过叠加平台区的谐波,可获得一个持续时间在33 as的孤立阿秒脉冲.
An effect method to obtain the single attosecond pulses(SAPs)by using the inhomogeneous polarization gating(PG)technology in the crossed nanostructure has been proposed and investigated.It is found that by properly injecting the gas into the negative position of the nanostructure,the emitted harmonics at the very highest orders used for the SAPs only occur at one side of the region inside the nanostructure.As a result,not only the extension of the harmonic cutoff can be achieved,but also the modulations of the harmonics can be decreased.Further,by superposing the selected harmonics from the inhomogeneous PG scheme,a 33 as SAP can be obtained.
作者
刘航
冯立强
LIU Hang;FENG Li-Qiang(School of Chemical and Environmental Engineering,Liaoning University of Technology,Jinzhou 121001,China;College of Science,Liaoning University of Technology,Jinzhou 121001,China;State Key Laboratory of Molecular Reaction Dynamics,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023,China)
出处
《原子与分子物理学报》
CAS
北大核心
2019年第3期459-463,共5页
Journal of Atomic and Molecular Physics
基金
国家自然科学基金(11504151)
辽宁省博士启动基金(201501123)
辽宁省教育厅基金(JL201615405)
关键词
高次谐波
阿秒脉冲
极化门方案
交叉型纳米结构
气体位置
High-order harmonic generation
Attosecond pulse generation
Polarization gating scheme
Crossed nanostructure
Gas position
