摘要
Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+and He+ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting. In addition, the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing. It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.
Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H+and He+ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting. In addition, the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing. It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.
作者
Xin Su
Nan Gao
Meng Chen
Hong-Tao Xu
Xing Wei
Zeng-Feng Di
苏鑫;高楠;陈猛;徐洪涛;魏星;狄增峰(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;University of Chinese Academy of Sciences;Shanghai Simgui Technology Co., Ltd.)
基金
Supported by the National Natural Science Foundation of China under Grant No 61674159
the Program of National Science and Technology Major Project under Grant No 2016ZX02301003
the Shanghai Academic/Technology Research Leader under Grant Nos 16XD1404200 and 17XD1424500
the Key Research Project of Frontier Science of Chinese Academy of Sciences under Grant No QYZDB-SSW-JSC021
the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB30030000
