摘要
以常规多晶硅光伏电池为基础,在多晶硅衬底上沉积一层p型非晶硅薄膜,构成具有"窗口效应"的p-p型异质结。该电池无需复杂的生产工艺,只需增加简单的步骤便可实现。研究表明,对于多晶硅光伏电池来说,由于材料禁带宽的差异使得该电池在太阳光谱最强阶段和长波段具有更高的开路电压和光谱响应,光电转换效率更高;同时埋栅降低了半导体与金属电极的接触电阻,电池的光电转换效率更高,满足信息技术设备对供电系统高电量、稳定性的需求。
Based on the conventional polysilicon photovoltaic cells, a layer of p amorphous silicon film was deposited on the polycrystalline silicon substrate to form a p-p type heterojunction with window effect. The battery does not require complicated production process, which can be realized simply by adding simple steps. The study results show that, for polysilicon photovoltaic cells, the difference of band gap makes the cell possess the higher open circuit voltage, spectral response and the photoelectric conversion efficiency in the strongest and long band of the solar spectrum. At the same time, the buried gate reduces the contact resistance of the semiconductor and the metal electrode, and leads to the higher photoelectric conversion efficiency of the battery, which meet the demand of information technology equipment for high power and stability of power supply system.
作者
王建平
WANG Jian-ping(China Institute of Atomic Energy, Beijing 102413, China)
出处
《电源技术》
CAS
北大核心
2019年第5期823-824,883,共3页
Chinese Journal of Power Sources
关键词
窗口效应
异质结
信息技术装备
埋栅
window effect
heterojunction
information technology equipment
buried grid
