期刊文献+

Si_(8-x)Ge_x合金的电子、力学和光学性质第一性原理计算 被引量:1

First-Principles Calculation of Electronic,Mechanical and Optical Properties of Si_(8-x)Ge_x Alloys
下载PDF
导出
摘要 采用基于密度泛函理论的第一性原理计算方法,研究Si_(8-x)Ge_x合金的电子、力学和光学性质.计算结果表明:Si_(8-x)Ge_x合金的能带结构相似;弹性系数、体模量和剪切模量均随x的增大呈减小趋势;静态介电常数、折射率和反射系数均随x的增大呈准线性增加趋势;等离子体振荡频率随x的增大呈减小趋势. The electronic, mechanical and optical properties of Si8-xGex alloys were investigated by using first-principles calculation method based on density functional theory. The calculation results show that the structures of energy bands of Si8-x Gex alloy are similar, the elastic coefficient, bulk mo dulus and shear modulus decrease with the increase of x , the static dielectric constants, refractive index and reflection coefficient increase quasi-linearly with the increase of x , and the plasma oscillation frequency decreases with the increase of x .
作者 杨晓翠 李伟 马宏源 于卓 肖俊平 YANG Xiaocui;LI Wei;MA Hongyuan;YU Zhuo;XIAO Junping(College of Physics and Electronic Information,Baicheng Normal University,Baicheng 137000,Jilin Province,China)
出处 《吉林大学学报(理学版)》 CAS 北大核心 2019年第3期658-662,共5页 Journal of Jilin University:Science Edition
基金 吉林省教育厅"十三五"科学技术研究项目(批准号:吉教科合字[2016]第35号)
关键词 Si8-xGex合金 电子性质 光学性质 第一性原理计算 Si8-xGex alloy electronic property optical property first-principles calculation
  • 相关文献

参考文献1

二级参考文献22

  • 1方荣川.固体光谱学[M].合肥:中国科学技术大学出版社,2001.5. 被引量:4
  • 2Vaitheeswaran G, Kanchana V, Rajagopalan M. Structural Phase Stability and Superconductivity of LaN [J]. Solid State Commun, 2002, 124(3): 97-102. 被引量:1
  • 3Ciftci Y O, Colakoglu K, Deligoz E, et al. The First-Principles Study on the LaN [J]. Mater Chem Phys, 2008, 108(1) : 120-123. 被引量:1
  • 4Ghezail M, Amrani B, Cherchab Y, et al. Strucutral and Electronic Properties of LaN [-J]. Mater Chem Phys, 2008, 112(3): 774-778. 被引量:1
  • 5Svane A, Szotek Z, Temmerman W M, et al. Electronic Structure of Cerium Monopnictides under Pressure [J]. J Phys Condens Matter, 1998, 10(24): 5309-5325. 被引量:1
  • 6Lee T Y, Gall D, Shin C S, et al. Growth and Physical Properties of Epitaxial CeN Layers on MgO (001) [J]. J Appl Phys, 2003, 94(2): 921-927. 被引量:1
  • 7Kanchana V, Vaitheeswaran G, Zhang X, et al. Lattice Dynamics and Elastic Properties of the 4f Electron System.- CeN [-J]. Phys Rev B, 2011, 84(20) : 205135. 被引量:1
  • 8Olsen J S, Jq, rgensen J E, Gerward L, et al. Compressibility and Structural Stability of CeN from Experiment and Theory [J]. J Alloys Comp, 2012, 533(1): 29-32. 被引量:1
  • 9Petukhov A G. Electronic Structure of Rare-Earth Pnictides [J]. Phys Rev B, 1996, 53(8): 4324-4339. 被引量:1
  • 10Larson P, Lambrecht W R L. Electronic Structure of Gd Pnictides Calculated within the LSDA+U Approach[J]. Phys Rev B, 2006, 74(8): 085108. 被引量:1

同被引文献4

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部