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化学机械抛光后清洗工艺对多孔低k介质的影响 被引量:3

Effect of cleaning process on porous low-k dielectrics after chemical mechanical planarization
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摘要 对多孔低k介质BD(Black Diamond)光片化学机械抛光(CMP)后,采用由150 mg/L FA/O Ⅱ型螯合剂与750 mg/L FA/O Ⅱ型表面活性剂组成的碱性清洗液(pH=10.4)进行清洗。探究了清洗过程中刷子间距、刷子转速,以及清洗液和去离子水刷洗时间对BD的k值和清洗效果的影响。得到较优的清洗工艺条件为:刷子间距-0.5 mm,刷子转速200 r/min,清洗液刷洗时间40 s,去离子水刷洗时间75 s。在该条件下的清洗效果良好,BD表面粗糙度为0.24 nm,k值的变化率低于5%。 The porous low-k dielectric BD(Black Diamond)was cleaned in an alkaline solution comprising 150 mg/L FA/OⅡchelating agent and 750 mg/L FA/OⅡsurfactant after chemical mechanical planarization(CMP).The effects of several factors such as spacing between brushes,rotation speed of brushes,and time for brushing with the alkaline solution and deionized water respectively on the k value of BD and cleaning efficiency were studied.The optimal conditions were determined as follows:spacing between brushes 0.5 mm,rotation speed of brushes 200 r/min,alkaline brushing time 40 s,and deionized water brushing time 75 s.The cleaning efficiency was good as shown by a surface roughness of 0.24 nm for BD and a change rate of less than 5%for its k value after cleaning.
作者 韩春宇 檀柏梅 高宝红 杨柳 刘宜霖 王昊 藏俊生 王慧 HAN Chun-yu;TAN Bai-mei;GAO Bao-hong;YANG Liu;LIU Yi-lin;WANG Hao;ZANG Jun-sheng;WANG Hui(School of Electronic Information Engineering,Hebei University of Technology,Tianjin 300130,China)
出处 《电镀与涂饰》 CAS CSCD 北大核心 2019年第8期338-343,共6页 Electroplating & Finishing
基金 国家中长期科技发展规划02科技重大专项(2016ZX02301003-004-007) 国家青年自然科学基金(61704046) 河北省自然科学基金(F2018202174)
关键词 多孔绝缘介质 化学机械抛光 碱性清洗 相对介电常数 表面粗糙度 porous dielectric chemical mechanical planarization alkaline cleaning relative permittivity surface roughness
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