摘要
采用离子源技术制备掺钨类金刚石薄膜(W-DLC),为系统地探究各工艺参数对薄膜硬度的影响,设计了L9(34)正交试验方案,同时结合正交分析效应曲线分别研究了C2H2流量、离子源电流、基体负偏压、钨靶电流对薄膜硬度的影响.结果表明:基体负偏压对薄膜硬度影响最大,其次为C2H2流量和离子源电流,钨靶电流的影响最小;薄膜硬度随C2H2流量的增大整体呈上升趋势,随离子源电流及偏压的增加而增加,随钨靶电流的增加而减小;工艺参数组合优选为C2H2流量100mL/min、离子源电流8A、负偏压100V、钨靶电流4A.该研究为后续进一步优化工艺,制备高性能类金刚石薄膜提供了重要的理论依据.
To explore the influence of deposition parameters on the hardness of W-doped diamond-like carbon films by ion source technology,orthogonal analysis method and the effect curve was used to notify the effect of deposition parameters including C2H2 flow rate,ion source current,substrate negative bias voltage and W target current on the hardness of W-doped diamond-like carbon films.The results indicates that the substrate negative bias voltage plays the key role on the hardness of films,which is followed by the C2H2 flow rate,ion source current and W target current finally.The relationships between the various parameters and the hardness of the deposited W-doped diamond-like carbon films were discussed.The optimal combination of process parameters is 100 mL/min acetylene flow,8 A ion source current,100 V negative bias and 4A tungsten target current.This study provides an important theoretical basis for further optimizing the process to prepare high performance diamond-like films.
作者
张程
李福球
谢思中
林凯生
朱晖朝
张忠诚
ZHANG Cheng;LI Fuqiu;XIE Sizhong;LIN Kaisheng;ZHU Huichao;ZHANG Zhongcheng(Guangdong Institute of New Materials,National Engineering Laboratory for Modern Materials Surface Engineering Technology,The Key Lab of Guangdong for Modern Surface Engineering Technology,Guangzhou 510650,China;China Airlines South Industry Co.,Ltd.,Zhuzhou 412000,China)
出处
《材料研究与应用》
CAS
2019年第1期53-56,共4页
Materials Research and Application
基金
广东省科学院实施创新驱动发展能力建设专项资金项目(2018GDASCX-0402).
关键词
正交分析
类金刚石
薄膜
硬度
orthogonal analysis
diamond-like
film
hardness
