摘要
研究了抗辐射高压SOI埋氧总剂量加固技术,发现在总剂量辐射条件下不同埋氧加固工艺背栅阈值变化的情况。通过增加埋氧加固技术可以有效地抑制总剂量辐射环境下对高压器件的调制效应。
The paper studies the buried oxide radiation effect in SOI high voltage devices and the corresponding radiation hardened process methods.The irradiation test data show the relationship between the back gate threshold voltage shift and the different buried oxide radiation hardened process.The robustness of the high voltage component of SOI technique will be enhanced with the addition of buried oxide radiation hardened process.
作者
徐海铭
洪根深
吴建伟
徐政
刘国柱
XU Haiming;HONG Genshen;WU Jianwei;XU Zheng;LIU Guozhu(China Electronic Technology Group Corporation No.5S Institute,Wuxi 214072,China)
出处
《电子与封装》
2019年第1期41-43,47,共4页
Electronics & Packaging
关键词
埋氧
总剂量
加固
buried oxide
total ion dose
radiation hardened
