摘要
为了提高IGBT物理模型精度,本文通过分析IGBT内部工作机理,提出了一种基区载流子分布模型。该模型不仅考虑了载流子在基区的一维分布,同时也考虑了MOS末端的二维效应,同时提出了适当的边界条件,并采用向后差分法求解双极型输运方程。通过双脉冲测试电路实验,分别在纯电感负载和阻感负载条件下进行大功率和小功率验证。实验结果表明该模型仿真与实验结果拟合较好,本文提出的物理模型正确性得到验证。
In order to improve the accuracy of IGBT physical model,after analyzing the internal working mechanism of IGBT,a carrier distribution model is proposed.The model not only considers the one-dimensional distribution of the carrier in the base area,but also considers the two-dimensional effect of the end of the MOS.At the same time,the proper boundary conditions are given,and the backward difference method is used to solve the bipolar transport equation.Two pulse test circuit experiments are carried out to verify the high power and low power under the condition of inductor load and resistive-inductive load respectively.The experimental results show that the simulation results are in good agreement with the experimental results.The correctness of the physical model proposed in this paper is verified.
作者
李蝶
魏克新
景雷
Li Die;Wei Kexin;Jing Lei(Tianjin University of Technology,Tianjin,300384,China;Tianjin University,Tianjin,300072,China)
出处
《仪器仪表用户》
2018年第12期1-7,共7页
Instrumentation
基金
国家重点研发计划资助(No.2017YFB0102500)
