期刊文献+

采用电荷平衡模数转换器的高精度CMOS温度传感器 被引量:6

A CMOS Temperature Sensor with High-Precision Using a Charge-Balance Analog-to-Digital Converter
下载PDF
导出
摘要 针对传统CMOS温度传感器芯片精度低,功耗高和温度范围窄的问题,提出了一种采用电荷平衡模数转换器(ADC)的高精度CMOS温度传感器。为了避免使用高精度带隙基准源,传感器中基于寄生双极晶体管的温度感知电路分别产生与温度成正比和反比的两个电压,再用一个电荷平衡ADC对这两个电压交替量化,得到与实时温度对应的数字量;工艺波动引起的感知误差采用一个外置基准电压来校准;整个温度传感器电路采用0.18μm CMOS工艺设计。仿真结果表明:在-40~125℃的温度范围内,传感器的测量精度可达±0.2℃,完成一次测量的时间仅为42ms,工作电流为130μA,芯片版图面积为0.55mm^2。该温度传感器可应用在植入式医疗、射频标签和物联网等系统中实现对温度的高精度测量。 A CMOS temperature sensor with high precision using a charge-balance analog-to-digital converter(ADC)is presented to solve the problems of low accuracy,high power consumption and narrow measuring range of conventional CMOS temperature sensor chips.The temperature sensing circuit based on parasitic bipolar junction transistors generates a voltage proportional to absolute temperature and a voltage inversely proportional to absolute temperature to avoid high-precision bandgap voltage reference,and then a charge-balanced ADC is used to alternatively quantify these two voltages and to obtain the 15 bit digital result corresponding to the real-time temperature.Sensing errors due to process variation are calibrated with an external reference voltage.A temperature sensing circuit is designed in a 0.18μm CMOS process and is used for simulation.Results show that the measuring accuracy is±0.2℃in a temperature range from-40℃to 125℃,while the duration for one measuring cycle is 42 ms,the operating current is only 130μA,and the layout area of the core circuit is only 0.55 mm 2.The proposed temperature sensor can be applied in the systems that require temperature sensor chips with high accuracy,low power consumption and wide measuring range,such as implantable medical devices,radio frequency identification tags and the Internet of Things.
作者 陈阳 张瑞智 金锴 焦子豪 张鸿 CHEN Yang;ZHANG Ruizhi;JIN Kai;JIAO Zihao;ZHANG Hong(School of Microelectronics,Xi’an Jiaotong University,Xi’an 710049,China)
出处 《西安交通大学学报》 EI CAS CSCD 北大核心 2018年第10期124-131,共8页 Journal of Xi'an Jiaotong University
基金 国家自然科学基金资助项目(61474092)
关键词 温度传感器 高精度 低功耗 宽测量范围 temperature sensor high-precision low power consumption wide measuring range
  • 相关文献

参考文献10

二级参考文献54

  • 1秦峰,贺益康,刘毅,章玮.两种高频信号注入法的无传感器运行研究[J].中国电机工程学报,2005,25(5):116-121. 被引量:216
  • 2齐放,邓智泉,仇志坚,王晓琳.基于MRAS的永磁同步电机无速度传感器[J].电工技术学报,2007,22(4):53-58. 被引量:78
  • 3刘金琨,孙富春.滑模变结构控制理论及其算法研究与进展[J].控制理论与应用,2007,24(3):407-418. 被引量:564
  • 4ZHANG Dai,BHIDE A,ALVANDPOUR A.A 53-nW 9.1-ENOB 1-Ks/s SAR ADC in 0.13-μm CMOS for medical implant devices[J].IEEE Journal of SolidState Circuits,2012,47(7):1585-1593. 被引量:1
  • 5MCCREARY J L,GRAY P R.All-MOS charge redistribution analog-to-digital conversion techniques I[J].IEEE Journal of Solid-State Circuits,1975,10(6):371-379. 被引量:1
  • 6HUANG Guanying,CHANG Soonjyh,LIU Chuncheng,et al.10-bit 30Ms/s SAR ADC using a switchback switching method[J].IEEE Transactions on Very Large Scale Integration Systems,2013,21(3):584-588. 被引量:1
  • 7LIU Chuncheng,CHANG Soonjyh,HUANG Guanying,et al.A 10-bit 50-Ms/s SAR ADC with a monotonic capacitor switching procedure[J].IEEE Journal of Solid-State Circuits,2010,45(4):731-740. 被引量:1
  • 8TANG H,SUN Zhuochao,CHEW K W R,et al.A5.8nW 9.1-ENOB 1-Ks/s local asynchronous successive approximation register ADC for implantable medical device[J].IEEE Circuits and Systems Society,2013,22(10):2220-2224. 被引量:1
  • 9SUN Lei,DAI Qinyuan,LEE C C,et al.Analysis on capacitor mismatch and parasitic capacitors effect of improved segmented-capacitor array in SAR ADC[C]∥Proceedings of the Third International Symposium on Intelligent Information Technology Application.Piscataway,NJ,USA:IEEE,2009:280-283. 被引量:1
  • 10GINSBURG B P,CHANDRAKASAN A P.500-Ms/s5-bit ADC in 65-nm CMOS with spilt capacitor array DAC[J].IEEE Journal of Solid-State Circuits,2007,42(4):739-747. 被引量:1

共引文献104

同被引文献34

引证文献6

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部