摘要
采用金属有机化学气相沉积(MOCVD)技术在Si(111)衬底上外延Ga N薄膜,对高温Al N(HT-Al N)缓冲层在小范围内低生长压力(6.7~16.6 k Pa)条件下对Ga N薄膜特性的影响进行了研究。研究结果表明Ga N外延层的表面形貌、结构和光学性质对HT-Al N缓冲层的生长压力有很强的的依赖关系。增加HT-Al N缓冲层的生长压力,Ga N薄膜的光学和形貌特性均有明显改善,当HT-Al N缓冲层的生长压力为13.3 k Pa时,得到无裂纹的Ga N薄膜,其(002)和(102)面的X射线衍射峰值半高宽分别为735 arcsec和778 arcsec,由拉曼光谱计算得到的张应力为0.437 GPa,原子力显微镜(AFM)观测到表面粗糙度为1.57 nm。
GaN films were grown on Si(111)substrates by metal-organic chemical vapor deposition(MOCVD).The influence of high temperature AlN(HT-AlN)buffer low various growth pressure(6.7-16.6 kPa)on GaN films was studied.It is found that,the surface morphology and structural and optical properties of the GaN epilayer strongly depend on HT-AlN buffer growth pressure.Increase the growth pressure of HT-AlN buffer,the optical and morphology properties of GaN film are both significantly improved,when the growth pressure of HT-AlN buffer layer was at 13.3 kPa,we obtained a crack-free GaN film,the XRD FWHM of(002)and(102)plane of GaN film are 735 and 778 arcsec,respectively.The tensile stress calculated from Raman spectra is 0.437 GPa,and RMS roughness of AFM 5μm×5μm scan is 1.57 nm.
作者
韩军
赵佳豪
邢艳辉
史峰峰
杨涛涛
赵杰
王凯
李焘
邓旭光
张宝顺
HAN Jun;ZHAO Jia-hao;XING Yan-hui;SHI Feng-feng;YANG Tao-tao;ZHAO Jie;WANG Kai;LI Tao;DENG Xu-guang;ZHANG Bao-shun(Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences,Suzhou 215123,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2018年第9期1285-1290,共6页
Chinese Journal of Luminescence
基金
国家自然科学基金(61204011
11204009
61574011)
北京市自然科学基金(4142005)
北京市教委科研基金(PXM2017_014204_500034)资助项目~~
