摘要
应用有效的测试仪器和分析设备对真空定向凝固多晶硅中铁杂质的赋存形态,以及硅锭从底部到顶部的四个特征位置的径向电阻率的分布情况进行研究。研究表明,铁杂质在真空定向凝固多晶硅之中主要以α-Fe(Si)和β-Fe(Si)两种赋存形态存在。
The distribution of the distribution of the radial resistivity of the four characteristic positions of the silicon ingot from the bottom to the top of the silicon ingot from the bottom to the top is studied by the use of effective testing instruments and analytical equipment.The research indicates that iron impurity exists mainly in the two forms of-Fe(Si)and beta-Fe(Si)in vacuum directional solidification polysilicon.
出处
《化工设计通讯》
CAS
2018年第9期78-78,共1页
Chemical Engineering Design Communications
关键词
Fe杂质
真空定向凝固
多晶硅
电阻率
赋存形式
Fe impurity
vacuum directional solidification
polycrystalline silicon
resistivity
occurrence form
