摘要
本文对比了NO退火和磷掺杂两种栅钝化工艺,其中磷钝化采用了平面扩散源进行掺杂,通过C-V特性进行了4H-SiC/SiO2界面特性评价,使用Terman法分析计算获得距导带底0.2-0.4e V范围内界面态密度.结果表明引入磷比氮能更有效降低界面态密度,提高沟道载流子迁移率.其次,对比了两种栅钝化工艺制备的4H-SiC DMOSFET器件性能,实验表明采用磷钝化工艺处理的器件性能更优.最后,基于磷掺杂钝化工艺首次制备出击穿电压为1200V、导通电阻为20mΩ、漏源电流为75 A、阈值电压为2.4V的4H-SiC DMOSFET.
To improve the 4H-SiC/SiO 2 interface quality phosphorous-doped technology and nitrogen-annealed technology were introduced.The phosphorous atoms were introduced into the 4H-SiC/SiO 2 interface by thermal annealing with a planar diffusion source(PDS).Current-voltage test was used to characterize the interface quality.To obtain the interface state density(D it)lying energetically within 0.2eV-0.4eV of the conduction band edge(E c),the C-V data was analyzed by using Terman method.It is apparent that the phosphorous-doped technology can reduce the interface state density near the conduction band of 4H-SiC effectively and increase the channel mobility and decrease the on resistance.Compared with NO passivated devices,P-doped devices have better performance.What’s more,this technology has been applied to fabricate 1.2kV 4H-SiC DMOSFET firstly.Fabricated devices show a significant improvement with an on resistance of 20mΩ,drain-source current of 75A,threshold voltage of 2.4V.
作者
刘佳佳
刘英坤
谭永亮
张力江
崔玉兴
LIU Jia-jia;LIU Ying-kun;TAN Yong-liang;ZHANG Li-jiang;CUI Yu-xing(The 13th Research Institute,CETC,Shijiazhuang,Hebei 050051,China)
出处
《电子学报》
EI
CAS
CSCD
北大核心
2018年第8期2026-2029,共4页
Acta Electronica Sinica
