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旋涂热解结合快速退火制备SnS薄膜及表征 被引量:2

Preparation and characterization of SnS thin films by spin coating-pyrolysis method combined rapid annealing
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摘要 使用一种简单的旋涂热解法结合快速退火,在空气中以载玻片玻璃和FTO为衬底,在热解温度分别为280、320、360℃的条件下制备了一系列具有高化学计量比的硫化亚锡薄膜,并采用元素分析、X射线衍射分析、拉曼光谱分析、场发射扫描电镜分析、紫外可见近红外分析等表征方法,对以上温度所制备硫化亚锡薄膜的Sn/S原子比、薄膜晶相、表面和断面形貌、紫外光区至近红外光区的光吸收做了系统研究。结果表明,在320℃的热解温度和10 min的热解时间条件下,获得的硫化亚锡薄膜中Sn/S的原子比达到1/0.99,直接禁带宽度达到1.46 e V,与太阳能电池吸收层1.50 e V的最佳禁带宽度非常接近。使用该法制备的高化学计量比的硫化亚锡薄膜,在太阳能电池吸收层材料领域具有重要的潜在应用价值。 A series of high stoichiometric-ratio SnS thin films were prepared at 280,320,360℃on slide glass and FTO sub-strates in the air by a facial spin coating-pyrolysis method combined rapid annealing.Multiple characterization methods,such as energy spectrum analysis,X-ray diffraction,Raman scattering analysis,scanning electron microscopy and ultraviolet-visible-near infrared spectrophotometer were used in this experiment.The atomic ratio of Sn/S,crystalline phase,surface and cross-section morphologies and optical absorption between the ultraviolet and near infrared region of SnS thin films were investigated.The SnS thin film with a high Sn/S atomic ratio of 1/0.99 and a direct corresponding band gap of 1.46 eV was prepared at 320℃for 10 min,which was very close to the optimal band gap required by the absorption layer in thin film solar cells(1.5 eV)and it had an important potential application value in this field.
作者 杜春 赵涛 周彦强 刘华春 王霞 田央 张正国 Du Chun;Zhao Tao;Zhou Yanqiang;Liu Huachun;Wang Xia;Tian Yang;Zhang Zhengguo(School of Chemistry and Chemical Engineering,North Minzu University,Yinchuan 750021,China)
出处 《无机盐工业》 CAS 北大核心 2018年第7期37-40,共4页 Inorganic Chemicals Industry
基金 国家民委化工重点实验室科研项目(2017HG07) 北方民族大学科研项目(2016HG-KY03) 北方民族大学电化学能源转化技术开发和应用重点实验室课题资助项目(2018KLEA06)
关键词 SnS薄膜 旋涂热解 拉曼光谱 光学吸收 SnS thin film spin coating-pyrolysis Raman spectrum optical absorption
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