4H.L.Zhu, L.A.Tessaroto, R. Sabia.Chemical mechanical polishing (CMP) anisotropy in sapphire [J]. Applied Surface Science, 2004, 236(1-4): 120-130. 被引量：1
5Lei H,Luo J B.CMP of hard disk substrate using a colloidal SiO2 slurry:preliminary experimental investigation[J].Journal of Colloid and Interface Science,2003,263:506-515. 被引量：1
6Seiichi K,Noriyuki S,Yoshio H,et al.Slurry chemical corrsion and galvanic corrosion during copper chemical mechanical polishing[J].Japan J Appl Phys,Part 1,2000,39(11):6216-6219. 被引量：1
7Cook L M J.Chemical Process in Glass Polishing[J].Non-Cryst Solids,1990,120:152-155. 被引量：1
8Samsonov G V.The Oxide Handbook[M].2nd Ed.New York:IPI/Plenum Data,1982:192. 被引量：1
9Pietsch G J.Theatomic-scalere removal methanism during chemo-mechanical polishing of Si(100) and Si(111)[J].Surface Science,1995,395:331-333. 被引量：1
10Chen J M,Fang Y Ch.Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing[J].Transactions on Semiconductor Manufacturing,2002,15(1):39-44. 被引量：1
