摘要
本文介绍了全气密陶瓷封装GaAs MMIC开关的设计方法和制造工艺.研制成的GaAsMMIC单刀单掷开关在DC-12GHz频带内,插入损耗为0.3—1.4dB,隔离度为19—27dB,反射损耗大于11dB,开关速度小于1ns,8GHz下功率处理能力大于25dBm.
The paper describes a design method and fabrication technology of GaAs MMIC switch in airtight ceramic package. The developed GaAs MMIC SPST switch has an insertion loss of 0.3-1.4dB over DC-12GHz frequency band with a return loss of better than 11dB. An isolation increases with frequency from 19dB at DC to 27dB at 12GHz. The SPST switch demonstrates a switching time less than 1ns and a power-handling capability of batter than 25dBm at 8GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第1期2-7,共6页
Research & Progress of SSE
