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钕掺杂对SnO_2·Co_2O_3·Nb_2O_5压敏电阻瓷电性能的影响 被引量:2

Effects of Nd Dopant on the Electrical Properties of SnO_2·Co_2O_3·Nb_2O_5-based Ceramics for Varistors
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摘要 通过对样品的伏安特性,晶界势垒的测量和分析,研究了Nd2O3对SnO2·Co2O3·Nb2O5压敏电阻瓷电性能的影响。发现掺入x(Nb2O3)为0.050%的样品表现出最好的压敏性质,其压敏电压为460.69 V/mm,密度为6.812 g/cm3,非线性系数为18.7。为了说明电学非线性的起源,提出了SnO2压敏材料的一个缺陷势垒模型。 The electrical properties of SnO2Co2O3Nb2O5 based varistors doped with various Nd2O3 were investigated by determining the V-I characteristics and boundary defect barrier height. It is found that an optimal composition doped with 0.05 mol% Nd2O3 exhibits a highest breakdown electrical field of 460.69 V/mm, a highest density of 6.812 g/cm3, and a highest nonlinear coefficient of 18.7 among the SnO2 based varistors. In order to explain the origin of the electrical nonlinear, a defect barrier model for SnO2Co2O3Nb2O5 based varistors is presented.
出处 《电子元件与材料》 CAS CSCD 北大核心 2002年第11期1-3,6,共4页 Electronic Components And Materials
基金 国家理科人才培养基地建设项目
关键词 钕掺杂 压敏电阻瓷 二氧化锡 压敏电阻器 电学性能 三氧化二钴 氧化铌 tin oxide varistors electrical properties
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