摘要
通过对样品的伏安特性,晶界势垒的测量和分析,研究了Nd2O3对SnO2·Co2O3·Nb2O5压敏电阻瓷电性能的影响。发现掺入x(Nb2O3)为0.050%的样品表现出最好的压敏性质,其压敏电压为460.69 V/mm,密度为6.812 g/cm3,非线性系数为18.7。为了说明电学非线性的起源,提出了SnO2压敏材料的一个缺陷势垒模型。
The electrical properties of SnO2Co2O3Nb2O5 based varistors doped with various Nd2O3 were investigated by determining the V-I characteristics and boundary defect barrier height. It is found that an optimal composition doped with 0.05 mol% Nd2O3 exhibits a highest breakdown electrical field of 460.69 V/mm, a highest density of 6.812 g/cm3, and a highest nonlinear coefficient of 18.7 among the SnO2 based varistors. In order to explain the origin of the electrical nonlinear, a defect barrier model for SnO2Co2O3Nb2O5 based varistors is presented.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2002年第11期1-3,6,共4页
Electronic Components And Materials
基金
国家理科人才培养基地建设项目