Electroluminescence from Si/SiO2 films deposited on p—Si substrates
-
1马书懿,王印月,刘雪芹.Au/(Si/SiO_2)/p型Si结构的可见电致发光研究[J].功能材料与器件学报,2000,6(4):354-356. 被引量:2
-
2张亚雄,李安平,陈开茅,张伯蕊,孙允希,秦国刚,马振昌,宗婉华.n^+-Si与p-Si衬底上含纳米硅的SiO_2膜电致发光[J].物理学报,1997,46(5):1011-1014. 被引量:3
-
3吴伟明.手机不开机维修经验[J].家电维修(大众版),2009(2):26-28.
-
4Chen ChenWei-De WangYong-Qian SongShu-Fang XuZhen-Jia.Influence of coupling between Er^3+,nc—Si and nonradiative centers on photoluminescence from Er^3+—doped nc—Si/SiO2 films[J].Chinese Physics B,2003,12(5):578-579.
-
5王新,汤海鹰,李野,秦旭磊,端木庆铎,于洋.Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering[J].Journal of Beijing Institute of Technology,2012,21(4):547-550.
-
6马书懿,陈辉,萧勇,马自军,孙爱民.A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films[J].Chinese Physics B,2004,13(2):264-267. 被引量:1
-
7衡成林,王孙涛,秦国刚,王敬,王永鸿,陈坚邦,濮玉梅,陈晶.GaAs/SiO_2超晶格的制备和Raman光谱研究[J].光散射学报,2000,12(3):142-146.
-
8张开彪,马书懿.Au/(Si/SiO_2)/p-Si结构中电流输运机制的研究[J].电子元件与材料,2005,24(7):56-57. 被引量:3
-
9王霆,刘会赟,张建军.Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates[J].Chinese Physics Letters,2016,33(4):52-55.
-
10李国正,张浩,高勇,刘西钉,刘恩科,张翔九,卢学坤,王迅.Ge_(0.1)Si_(0.9)/Si近红外探测器的结构设计与试验[J].半导体光电,1995,16(1):53-56. 被引量:2