摘要
通过器件仿真软件Silvaco对带单层浮空场板的高压LDMOS(Lateral Double-diffused MOSFET)器件进行了设计与优化。仿真结果表明:对于击穿电压为600 V的RESURF(reduced surface field)LDMOS器件,场板能够有效地优化器件表面电势分布,降低电场峰值,提高器件的击穿电压。其中场板的数量、长度等参数对高压RESURF-LDMOS器件的耐压有较大影响。并且场板结构增加了double RESURF器件P-top剂量的容差范围,影响了器件的导通电阻。
In the paper, the high voltage RESURF-LDMOS with single layer floating field plate has been researched andoptimized through simulation tool Silvaco.The simulation results show that: for the high voltage device with RESURF structure, field plates have a significant effect for the optimization of device surface electric field, the number and the length of field plates have great influence on the BV of device, and field plates can reduce the peak of electric field. Also, field plates can increase the tolerance range of the P-top dose of the double RESURF-LDMOS, and this lead to the change of the on resistance of device.
出处
《电子与封装》
2015年第8期34-37,共4页
Electronics & Packaging
