摘要
以6H-SiC(0001)Si面和Si(100)为衬底,采用磁控溅射Fe-Si合金靶和Si靶两靶共溅射的方法,并经过后续的快速退火成功制备了β-FeSi2薄膜。通过X射线衍射(XRD)、拉曼(RAMAN)和电子扫描电镜(SEM)研究了不同衬底对薄膜生长过程的影响。结果表明:与Si衬底不同,6H-SiC为衬底所生长的FeSix薄膜与衬底之间很难产生相互扩散,导致薄膜中的Si原子主要来源于靶材。同时分析不同退火温度对6H-SiC衬底和Si衬底上的FeSix薄膜的影响,并相比较。结果表明:不同衬底Si(100)和6H-SiC(0001)Si面所生长的薄膜经900℃退火时皆完全转化为多晶β-FeSi2相,其择优取向皆为(220)/(202),且随温度从500℃到900℃的不断上升,(220)/(202)衍射峰的强度增强,半高宽变小,得到900℃下的半高宽为0.33°。
β-Fe Si_2 films were successfully prepared on 6H-Si C( 0001) Si-face and Si( 100) substrate using Fe-Si alloy target and Si target by DC magnetron sputtering. After deposition,the Fe Sixfilms were treated by rapid thermal annealing( RTA). The effect of different substrates on the films was presented by X-ray diffraction( XRD),Raman spectrum,and SEM,which reveals that it is difficult to interdiffuse for atoms at the interfaces between the 6H-Si C substrate and the Fe Sixfilms,and thus Si atoms in the Fe Sixfilms deposited on 6H-Si C( 0001) substrates are mainly from targets. Then,the dependence of the annealing temperature on Fe Sixfilms grown on 6H-Si C substrates and Si substrates were investigated and compared.The results show that Fe Sixfilms all transform to polycrystalline β-Fe Si_2,and the preferred orientations are all( 220) /( 202) at annealing temperature 900 ℃ at different substrates. As increasing annealing temperature from 500 ℃ to 900 ℃,the intensities of β-Fe Si2( 220) /( 202) diffraction peaks enhance and the full-width at half maximum( FWHM) of them decreases to 0. 33° at annealing temperature 900℃.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2016年第3期629-632 638,共5页
Journal of Synthetic Crystals
基金
陕西省自然科学基金(2015JM6286)
