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表面修饰纳米CdS制备中两个重要影响因素及结构表征 被引量:14

Two Important Influential Factors t o the Preparation and Structure Characterization of Surface-Capped CdS Nanocrystals
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摘要 利用溶胶-凝胶法制备了PVP表面修饰的CdS纳米晶粒。考察了影响纳米CdS制备的两个重要因素Cd2+/S2-和PVP,及其作用机理。确证表面过剩S2-和PVP在反应体系中的作用是在较高浓度下制备纳米CdS的两个重要因素,进一步确定了PVP的最佳用量。通过TEM、ED、XRD、FT-IR等手段对合成的纳米粒子进行了结构表征,最小粒径为7~10nm,闪锌矿构型,粒子大小及形貌可通过改变Cd2+/S2-及反应物浓度来控制。最后给出了CdS/PVP纳米晶粒的结构模型。 CdS nanocrystals surface-capped wi th PVP were synthesized by Sol-Gel me thod.Two important influential factors(Cd 2+ /S 2- and PVP)for the preparation of the CdS nanocrystals and their influential mechan isms were investigated.It is confirmed that t he effect of superfluous S 2- and addition of PVP on the reaction sy stem are two important factors in the preparatio n of the CdS nanocrystals in high Cd 2+ and S 2- concentration solution,and the best dosage of PVP was determined.The structure was characterized by means of TEM,ED,XRD and FT-IR techniques.It is found that the size of the minimal particles are 7~10nan ometers,and the configuration is haw-leyite and the size and shape can be co ntrolled by Cd 2+ /S 2- and the concentration of reactant.F inally,the structure model of CdS /PVP was sugge sted.
出处 《无机化学学报》 SCIE CAS CSCD 北大核心 2002年第10期997-1002,共6页 Chinese Journal of Inorganic Chemistry
基金 国家自然科学基金资助项目(No.20076004)。
关键词 表面修饰 结构表征 纳米CDS PVP 光电半导体材料 硫化镉 CdS nanoparticles Cd^(2+) /S^(2-) PVP
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