摘要
以工业白炭黑为硅源,葡萄糖粉剂为碳源,硝酸钐为掺杂源,通过碳热还原法制备了钐掺杂碳化硅(SiC)。并利用X射线衍射、扫描电子显微镜、比表面积测试仪、紫外可见吸收光谱等测试方法,研究了煅烧温度、掺杂摩尔比对制备的钐掺杂碳化硅的物相组成、微观形貌、比表面积等的影响。结果表明,钐掺杂碳化硅能够增大碳化硅粉体的比表面积,减小其禁带宽度。当碳热还原温度为1350℃、钐掺杂摩尔比(Sm/Si)为0. 03时,制得的钐掺杂碳化硅粉体性能最佳,其比表面积约为95 m^2/g,禁带宽度为2. 40 eV。
Samarium doped silicon carbide （SiC） was synthesized with carbothermal reduction method. And the glucose powder,carbon -white and samarium nitrate was used as the carbon source, the silicon source and the doping source, respectively. The phases,micromorphology and specific surface area of the samples were characterized by X-ray diffraction, scanning electron microscopy, surfacearea analyzer and ultraviolet ＆visible absorption detector. The results show that the specific surface area of SiC is increased while the bandgap of SiC is reduced after the doping of Sm. When the carbothermal reduction temperature is 1350 ℃ and the molar ratio of Sm ∶ Si is0. 03, Sm-doped SiC powder has the best performance. The specific surface area is 95 m2/ g and band gap is 2. 40 eV.
作者
郑雨佳
王柏予
汪晗
曹宏
薛俊
ZHENG Yujia;WANG Baiyu;WANG Han;CAO Hong;XUE Jun(School of Materials Science and Engineering,Wuhan Institute of Technology,Wuhan 430073,China;EngineeringResearch Center of Environmental Materials and Membrane Technology of Hubei Province,Wuhan 430073,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2018年第11期36-41,共6页
Electronic Components And Materials
基金
国家科技支撑计划项目(2013BAB07B05)
国家自然科学基金项目(71303180)
武汉工程大学研究生教育创新基金项目(CX2017017)
关键词
碳化硅
钐掺杂
比表面积
禁带宽度
碳热还原法
沉淀白炭黑
silicon carbide
Sm-doped
specific surface area
band gap
carbothermal
precipitated silica
